4.6 Article

High-power quasi-CW diode-pumped 750-nm AlGaAs VECSEL emitting a peak power of 29.6 W and an average power of 8.5 W

Journal

OPTICS LETTERS
Volume 47, Issue 8, Pages 1980-1983

Publisher

Optica Publishing Group
DOI: 10.1364/OL.450697

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Funding

  1. Deutsche Forschungsgemeinschaft [BR 3606/4-2, MI 500/24-2]

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A high-power output was achieved in a VECSEL using an AlGaAs material and diode pumping. The study highlights the importance of balancing low heat generation and strong absorption by choosing the appropriate barrier material, and emphasizes the significance of effective heat removal for power scaling of VECSELs.
A peak output power of 29.6 W and an average output power of 8.5 W at a wavelength of 750 nm were demonstrated in quasi-CW multi-mode operation using an AlGaAs-based vertical external-cavity surface-emitting laser (VECSEL) diode-pumped at a wavelength of 675 nm. The comparatively low bandgap of the barrier material that was tuned to the pump-photon energy allowed a good compromise between low heat generation due to the quantum defect and strong absorptance of the pump radiation. The limitations for the average output power came mainly from insufficient heat flow from the intra-cavity heat spreader to the heat sink. These results show the potential for power scaling of diode-pumped VECSELs and the importance of effective heat removal. (C) 2022 Optica Publishing Group

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