Journal
OPTICS EXPRESS
Volume 30, Issue 8, Pages 13890-13897Publisher
Optica Publishing Group
DOI: 10.1364/OE.457431
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Funding
- Natural Science Foundation of Shandong Province [ZR2020QF096, ZR2021QE281]
- National Natural Science Foundation of China [61775119, 62005144, 62175128]
- Qilu Young Scholar Program of Shandong University
- Taishan Scholar Foundation of Shandong Province [tsqn201812010]
- High-level Talent Cultivation Funds of State Key Laboratory of Crystal Materials of Shandong University
- Funds of Basic Research Operations of Shandong University [2020GN079]
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In this paper, a laser diode pumped passive mode-locking Tm,Ho:GAGG laser based on a semiconductor saturable absorber mirror (SESAM) is reported. By adjusting the group delay dispersions inside the laser cavity and transmissions of the output couplers (OCs), the laser achieved a shortest pulse duration and high average output power.
In this paper, a laser diode (LD) pumped passive mode-locking Tm,Ho:GAGG laser based on a semiconductor saturable absorber mirror (SESAM) is reported. By adjusting the group delay dispersions inside the laser cavity and transmissions of the output couplers (OCs), a shortest pulse duration of 10.84 ps at 2089.9 nm is achieved, the average output power is 33.17 mW and the laser runs at a 83.01 MHz repetition rate. A maximum average output power of 66.43 mW is also obtained at 2089.9 nm with a pulse duration of 16.56 ps by using an OC of 3fo. To the best of our knowledge, this is the first report on the mode-locking Tm,Ho:GAGG laser. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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