4.7 Article

Nd:YLF laser at 1053 nm diode side pumped at 863 nm with a near quantum-defect slope efficiency

Journal

OPTICS AND LASER TECHNOLOGY
Volume 149, Issue -, Pages -

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2021.107818

Keywords

Laser emission; Neodymium doping; Nd; YLF crystal; Diode pumping; In-band pumping

Funding

  1. Comissao Nacional de Energia Nuclear [01342.002132/2020-75]
  2. Conselho Nacional de Desenvolvimento Cientifico e Tecnologico [151188/2014-9, 308842/2017-0]
  3. Fundacao de Amparo a Pesquisa do Estado de Sao Paulo [2017 10765-5]

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This study demonstrates laser emission at the 1053 nm transition of Nd:YLF4 using diode-side-pumping at 863 nm. The laser configuration achieves the highest slope efficiency reported for the Nd:YLF4 medium, close to the quantum limit.
Laser emission at the 1053 nm transition of Nd:YLF4 is demonstrated using diode-side-pumping at 863 nm directly into the emitting level. The laser configuration uses one total internal reflection at the pump face and provides the highest slope efficiency reported for the Nd:YLF4 medium, close to the quantum limit. In quasi continuous mode, the laser operates with diffraction-limited beam quality and 78.2% slope efficiency with 14.4 W of output power. In continuous mode, 75.7% slope efficiency in both single-mode and multimode operation is achieved, with 13.5 W output power.

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