The effect of upper layer in optical capacitor based on SiO2/SiNx/SiO2/Si structure

The SiNx/SiOx and SiOx/SiNx/SiOx structures were fabricated on silicon substrates by plasma-enhanced and low-pressure chemical vapour deposition. It was shown that upper silicon oxide layer enhances photoluminescence yield from silicon nitride layer in three times. Furthermore, top silicon oxide layer protects underlying nitride layer from un-intended oxidation during rapid thermal annealing in inert ambient (1100 ?C, 3 min). The role of silicon oxide unintentionally formed during SiNx annealing and the specially deposited top SiO2 layer on SiNx photoluminescence have been discussed.

Automated summary

The impact of SiOx and SiOx/SiNx/SiOx structures on the photoluminescence of silicon nitride layer was studied. It was found that the upper silicon oxide layer can enhance the photoluminescence yield and protect the underlying nitride layer from unintended oxidation.