High-density switchable skyrmion-like polar nanodomains integrated on silicon

Topological domains in ferroelectrics(1-5)have received much attention recently owing to their novel functionalities and potential applications(6,7) in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limitstheir applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polartexture, which substantially modifiestheir resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.

Automated summary

Topological domains in ferroelectrics have been a subject of great interest due to their unique functionalities and potential applications in electronic devices. This study demonstrates the realization of room-temperature switchable skyrmion-like polar nanodomains on silicon, and the reversible transformation between different types of polar textures, which significantly modifies their resistive behaviors.