4.6 Article

Laser modification of Au-CuO-Au structures for improved electrical and electro-optical properties

Journal

NANOTECHNOLOGY
Volume 33, Issue 24, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1361-6528/ac5b52

Keywords

laser nanojoining; defect engineering; CuO nanowire devices; nanosecond laser; resistive switching; photocurrent; metal-semiconductor-metal structure

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This study demonstrates that nanosecond laser irradiation can significantly improve the electrical and optoelectrical properties in copper oxide nanowires, achieving joining between CuO NWs and gold electrodes and controlling the concentration and type of defects in CuO. The increase in defect centers and reduction in energy barrier at the Au/CuO interfaces lead to enhanced electrical conductivity and photo-conductivity, beneficial for applications such as resistive switching and photo-detection.
CuO nanomaterials are one of the metal-oxides that received extensive investigations in recent years due to their versatility for applications in high-performance nano-devices. Tailoring the device performance through the engineering of properties in the CuO nanomaterials thus attracted lots of effort. In this paper, we show that nanosecond (ns) laser irradiation is effective in improving the electrical and optoelectrical properties in the copper oxide nanowires (CuO NWs). We find that ns laser irradiation can achieve joining between CuO NWs and interdigital gold electrodes. Meanwhile, the concentration and type of point defects in CuO can be controlled by ns laser irradiation as well. An increase in the concentration of defect centers, together with a reduction in the potential energy barrier at the Au/CuO interfaces due to laser irradiation increases electrical conductivity and enhances photo-conductivity. We demonstrate that the enhanced electrical and photo-conductivity achieved through ns laser irradiation can be beneficial for applications such as resistive switching and photo-detection.

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