The onset of tapering in the early stage of growth of a nanowire

The early stage of growth of semiconductor nanowires is studied in the case where the sidewall adatoms have a short diffusion length due to a strong desorption. Experimental results are described for the growth of ZnSe nanowires by molecular beam epitaxy. They are discussed and interpreted using the Burton-Cabrera-Frank description of the propagation of steps along the sidewalls, and compared to other II-VI and III-V nanowires. The role of the growth parameters and the resulting shape of the nanowires (cylinder, cone, or both combined) are highlighted.

Automated summary

This study investigates the early stage of semiconductor nanowire growth where the diffusion length of sidewall adatoms is short due to strong desorption. Experimental results of ZnSe nanowire growth using molecular beam epitaxy are described and interpreted using the Burton-Cabrera-Frank model for step propagation along the sidewalls. The results are compared to other II-VI and III-V nanowires, highlighting the role of growth parameters and resulting nanowire shape.