4.6 Article

Parylene-based memristive crossbar structures with multilevel resistive switching for neuromorphic computing

Related references

Note: Only part of the references are listed.
Article Materials Science, Multidisciplinary

Nanocomposite parylene-C memristors with embedded Ag nanoparticles for biomedical data processing

Anna N. Matsukatova et al.

Summary: This paper investigates the characteristics of nanocomposite poly(chloro-p-xylylene) memristors and demonstrates their potential applications in neuromorphic systems.

ORGANIC ELECTRONICS (2022)

Article Nanoscience & Nanotechnology

Roadmap on emerging hardware and technology for machine learning

Karl Berggren et al.

Summary: Recent progress in artificial intelligence is primarily attributed to the rapid development of machine learning, but the performance and energy efficiency of hardware systems set fundamental limits on machine learning capabilities. Data-centric computing requires a revolution in hardware systems, with new hardware platforms offering hope for future computing with improved throughput and energy efficiency. However, challenges such as materials selection, device optimization, circuit fabrication, and system integration must be addressed in building such systems.

NANOTECHNOLOGY (2021)

Article Mathematics, Interdisciplinary Applications

Designing a bidirectional, adaptive neural interface incorporating machine learning capabilities and memristor-enhanced hardware

Sergey Shchanikov et al.

Summary: The article discusses the key challenges in building bidirectional biointerfaces, including signal stability and power efficiency, and introduces methods using machine learning techniques, nanoelectronics, and microfluidics to address these challenges.

CHAOS SOLITONS & FRACTALS (2021)

Article Nanoscience & Nanotechnology

Homogeneous 3D Vertical Integration of Parylene-C Based Organic Flexible Resistive Memory on Standard CMOS Platform

Qingyu Chen et al.

Summary: The study presents for the first time an organic flexible 3D VRRAM based on parylene-C, showing excellent memory characteristics including long retention time, high endurance cycles, and high ON/OFF ratio. This technology enables 3D integration through chemical stability and compatibility with standard photo-lithography patterning.

ADVANCED ELECTRONIC MATERIALS (2021)

Article Mathematics, Interdisciplinary Applications

Stochastic resonance in a metal-oxide memristive device

A. N. Mikhaylov et al.

Summary: Through experimental and theoretical studies, it has been found that adding white noise can enhance resistive switching and memristance response in a specific metal-oxide memristive device, triggering the stochastic resonance phenomenon. This suggests that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibrium.

CHAOS SOLITONS & FRACTALS (2021)

Article Mathematics, Interdisciplinary Applications

Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device

Jinwoong Yang et al.

Summary: This article introduces a CMOS-compatible Cu/HfO2/Si synaptic device for neuromorphic systems, showcasing different resistive switching characteristics under positive and negative forming processes, verified by XPS analysis.

CHAOS SOLITONS & FRACTALS (2021)

Article Physics, Applied

Parylene-based memristive synapses for hardware neural networks capable of dopamine-modulated STDP learning

A. A. Minnekhanov et al.

Summary: Research has shown that memristors based on biocompatible polymers not only possess stable memory characteristics suitable for NNs, but can also change their conductance via dopamine-like modulated STDP window, providing prospects for hardware realization of bio-inspired spiking NNs with RL ability.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Review Chemistry, Physical

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Tuo Shi et al.

Summary: Resistive switching devices are emerging devices with advantages of simple structure, low power consumption, high speed, and good scalability, primarily attributed to the formation of conductive filaments. Integration in a crossbar structure allows for further exploration of various applications.

SMALL STRUCTURES (2021)

Review Nanoscience & Nanotechnology

Resistive switching materials for information processing

Zhongrui Wang et al.

NATURE REVIEWS MATERIALS (2020)

Review Physics, Applied

A comprehensive review on emerging artificial neuromorphic devices

Jiadi Zhu et al.

APPLIED PHYSICS REVIEWS (2020)

Article Engineering, Electrical & Electronic

Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

Sreekanth Ginnaram et al.

IEEE ELECTRON DEVICE LETTERS (2020)

Article Materials Science, Multidisciplinary

Resistance Switching Peculiarities in Nonfilamentary Self-Rectified TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta Stacks

Dmitry S. Kuzmichev et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)

Review Chemistry, Physical

Memristive crossbar arrays for brain-inspired computing

Qiangfei Xia et al.

NATURE MATERIALS (2019)

Article Materials Science, Multidisciplinary

Frequency driven organic memristive devices for neuromorphic short term and long term plasticity

S. Battistoni et al.

ORGANIC ELECTRONICS (2019)

Article Nanoscience & Nanotechnology

Low Power Parylene-Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications

Qingyu Chen et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Multidisciplinary Sciences

Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications

Anton A. Minnekhanov et al.

SCIENTIFIC REPORTS (2019)

Article Materials Science, Multidisciplinary

On the resistive switching mechanism of parylene-based memristive devices

Anton A. Minnekhanov et al.

ORGANIC ELECTRONICS (2019)

Article Physics, Applied

Poly-para-xylylene-Based Memristors on Flexible Substrates

B. S. Shvetsov et al.

TECHNICAL PHYSICS LETTERS (2019)

Article Multidisciplinary Sciences

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Wei Wang et al.

NATURE COMMUNICATIONS (2019)

Review Materials Science, Multidisciplinary

Memristive Synapses for Brain-Inspired Computing

Jingrui Wang et al.

ADVANCED MATERIALS TECHNOLOGIES (2019)

Article Physics, Applied

Polyaniline-based memristive microdevice with high switching rate and endurance

D. A. Lapkin et al.

APPLIED PHYSICS LETTERS (2018)

Article Physics, Applied

A Precise Algorithm of Memristor Switching to a State with Preset Resistance

K. E. Nikiruy et al.

TECHNICAL PHYSICS LETTERS (2018)

Article Physics, Applied

Tutorial: Fabrication and three-dimensional integration of nanoscale memristive devices and

Peng Lin et al.

JOURNAL OF APPLIED PHYSICS (2018)

Article Nanoscience & Nanotechnology

A flexible organic resistance memory device for wearable biomedical applications

Yimao Cai et al.

NANOTECHNOLOGY (2016)

Review Engineering, Electrical & Electronic

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

Daniele Ielmini

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)

Article Multidisciplinary Sciences

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

M. Prezioso et al.

SCIENTIFIC REPORTS (2016)

Article Nanoscience & Nanotechnology

Resistive Switching Behavior in Gelatin Thin Films for Nonvolatile Memory Application

Yu-Chi Chang et al.

ACS APPLIED MATERIALS & INTERFACES (2014)

Article Nanoscience & Nanotechnology

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

Jian-Chiun Liou et al.

NANOSCALE RESEARCH LETTERS (2014)

Review Nanoscience & Nanotechnology

Electrochemical metallization memories-fundamentals, applications, prospects

Ilia Valov et al.

NANOTECHNOLOGY (2011)

Article Multidisciplinary Sciences

The missing memristor found

Dmitri B. Strukov et al.

NATURE (2008)

Article Physics, Applied

Hybrid electronic device based on polyaniline-polyethyleneoxide junction

V Erokhin et al.

JOURNAL OF APPLIED PHYSICS (2005)

Article Chemistry, Physical

Programmable polymer thin film and non-volatile memory device

JY Ouyang et al.

NATURE MATERIALS (2004)