Journal
NANO RESEARCH
Volume 15, Issue 6, Pages 5640-5645Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-022-4189-6
Keywords
transitional metal dichalcogenide; trilayer heterostructure; enhanced interlayer exciton effect; photoluminescence; interlayer exciton
Categories
Funding
- National Natural Science Foundation of China [61775241, 62090035, U19A2090]
- Science and Technology Innovation Basic Research Project of Shenzhen [JCYJ20180307151237242]
- Hunan Province Key Research and Development Project [2019GK2233]
- Hunan Provincial Science Fund for Distinguished Young Scholars [2020JJ2059]
- Key Program of Science and Technology Department of Hunan Province [2019XK2001, 2020XK2001]
- Youth Innovation Team of Central South University [2019012]
- High Performance Complex Manufacturing Key State Lab Project, Central South University [ZZYJKT2020-12]
- Australian Research Council (ARC Discovery Project) [DP180102976]
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Van der Waals heterostructures, formed by vertically stacking two different transition metal dichalcogenide monolayers, offer new opportunities for designing optoelectronic devices. In this study, we observed interlayer neutral excitons and trions in the MoSe2/MoS2/MoSe2 trilayer heterostructure, and found that the addition of a MoSe2 layer significantly increased the quantum yield of excitons. Our findings provide a promising platform for the development of more efficient optoelectronic devices and the exploration of new physical properties of transition metal dichalcogenides.
Van der Waals heterostructures have recently emerged, in which two distinct transitional metal dichalcogenide (TMD) monolayers are stacked vertically to generate interlayer excitons (IXs), offing new opportunites for the design of optoelectronic devices. However, the bilayer heterostructure with type-II band alignment can only produce low quantum yield. Here, we present the observation of interlayer neutral excitons and trions in the MoSe2/MoS2/MoSe2 trilayer heterostructure (Tri-HS). In comparison to the 8 K bilayer heterostructure, the addition of a MoSe2 layer to the Tri-HS can significantly increase the quantum yield of IXs. It is believed the two symmetrical type-II band alignments formed in the Tri-HS could effectively promote the IX radiation recombination. By analyzing the photoluminescence (PL) spectrum of the IXs at cryogenic temperature and the power dependence, the existence of the interlayer trions was confirmed. Our results provide a promising platform for the development of more efficient optoelectronic devices and the investigation of new physical properties of TMDs.
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