Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2-BN-Graphene van der Waals Heterostructures

Multifunctional electronic devices that combine logic operation and data storage functions are of great importance in developing next-generation computation. The recent development of van der Waals (vdW) heterostructures based on various two-dimensional (2D) materials have brought exceptional opportunities in designing novel electronic devices. Although various 2D-heterostructure-based electronic devices have been reported, multifunctional devices that can combine logic operations and data storage functions are still quite rare. In this work, we design and fabricate a half-floating-gate field-effect transistor based on MoS2-BN-graphene vdW heterostuctures, which can be used for logic operations as a MOSFET, nonvolatile memory as a floating-gate MOSFET (FG-MOSFET), and rectification as a diode. These results could lay the foundation for various applications based on 2D vdW heterostuctures and inspire the design of next-generation computation beyond the von Neumann architecture.

Automated summary

In this study, a multifunctional electronic device based on two-dimensional heterostructure was successfully designed and fabricated, which integrates logic operations, data storage, and rectification functions, providing inspiration for the design of next-generation computation beyond the von Neumann architecture.