Electrochemical properties and morphology of boron-doped diamond thin films

A boron-doped diamond (BDD) thin film was synthesized using the hot filament chemical vapor deposition (HFCVD) method. The surface shape, growth rate, bonding structure, and electrochemical properties of the BDD thin films were estimated through scanning electron microscopy (SEM), Raman spectroscopy, and cyclic voltammetry. As the boron doping concentration increased, the growth rate and crystal size of the diamond thin film decreased. Through Raman analysis, it was confirmed that the 1332 cm(-1) peak of diamond gradually became less intense, and peaks were generated at 480 cm(-1) and 1220 cm(-1) due to the bonding of boron to carbon. Cyclic voltammetry analysis of the BDD thin film showed a large potential window with a width of approximately 2.8 V. The highest applied voltage (2 V) versus response current (0.02 A) was obtained at a B/C ratio of 2000 ppm.

Automated summary

A boron-doped diamond thin film was synthesized using the HFCVD method, and its surface shape, growth rate, bonding structure, and electrochemical properties were characterized using SEM, Raman spectroscopy, and cyclic voltammetry. The growth rate and crystal size of the film decreased with increasing boron doping concentration, and Raman analysis confirmed the bonding effects of boron on the diamond structure. Cyclic voltammetry analysis showed that the boron-doped diamond thin film had a wide potential window.