ICP etching of GaN microstructures in a Cl2-Ar plasma with subnanometer-scale sidewall surface roughness

Substrate temperature, RF power, and ICP power were investigated for their effects on GaN micropillar sidewall roughness and etch characteristics. Elevated substrate temperature was shown to improve the sidewall etch morphology at low RF powers (reduced physical bombardment) and low ICP powers (lower plasma densities). Increased lateral etching is observed with both increased ICP power and substrate temperature, which both act to increase the chemical component of the etch. Etch conditions with a high chemical driving force resulted in faceting along the a-plane on the sidewalls. This faceting produced extremely smooth surfaces with root-mean square roughness (R-q) as low as 0.20 nm which is comparable to typical epitaxy-ready surfaces and smaller than the a-plane lattice spacing of 0.3186 nm. The smooth surfaces produced in this study enable possibilities for laser facets or for new device structures that require high quality surfaces for GaN regrowth.

Automated summary

This study investigates the effects of substrate temperature, RF power, and ICP power on GaN micropillar sidewall roughness and etch characteristics. The results show that adjusting these parameters can improve the sidewall etch morphology and produce extremely smooth surfaces suitable for GaN regrowth and new device structures.