Journal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume 277, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mseb.2021.115587
Keywords
Tungsten disulphide; Photodetector; Heterojunction; X-ray Photoelectron Spectroscopy; Raman Spectroscopy
Funding
- UGC-DAE CSR
- UGC-DAE CSR, Indore Centre
- UGC-DAE CSR, Kalpakkam Node
Ask authors/readers for more resources
The photoresponse properties of Tungsten disulphide (WS2)/Silicon (Si) thin films, synthesised by the e-beam evaporation technique, exhibited high absorbance in the visible range and a type-II heterojunction. Photodetection studies showed a high responsivity of 1.17 AW(-1) at an illumination of 1.6 mWcm(-2) of white light.
The photoresponse properties of Tungsten disulphide (WS2)/Silicon (Si) thin films, synthesised by the e-beam evaporation technique, have been reported. The synthesised films show preferential orientation along (001) direction of hexagonal WS2. The synthesised films were composed of vertically grown nanoflakes that were a few-layered thick. The films were highly absorbent in the visible range and exhibited A, B, and C excitonic transitions in the absorbance spectra. A type-II heterojunction between WS2/Si was obtained. Photodetection studies gave a high responsivity of 1.17 AW(-1) at an illumination of 1.6 mWcm(-2) of white light.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
