Journal
MATERIALS LETTERS
Volume 312, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2022.131653
Keywords
beta-Ga2O3; Semiconductors; Deposition; Thin films; Heterojunction; Photodetector
Funding
- Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China [IOSKL2020KF15]
- Excellent Talents Training Project of University of Science and Technology Liaoning, China [2019RC08]
- Natural Science Foundation of Liaoning Province, China [2019-ZD-0268]
- National Natural Science Foundation of China [61774072]
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The beta-Ga2O3/n-Si isotype heterojunction photodetector fabricated by depositing beta-Ga2O3 film on n-type Si substrate using metal-organic chemical vapor deposition demonstrates excellent photodetection properties with fast response speed and high sensitivity and selectivity to solar-blind ultraviolet light.
In this study, beta-Ga2O3/n-Si isotype heterojunction was fabricated to form a solar-blind ultraviolet photodetector by depositing beta-Ga2O3 film on n-type Si substrate using metal-organic chemical vapor deposition. Photodetection properties of the photodetector were investigated systematically. The fabricated isotype heterojunction photo detector exhibited typical rectifying characteristics and excellent light on-off switching performance. Under 254 nm illumination, the photodetector showed the photo-to-dark current ratio of 591.38 at-20 V bias. Meanwhile, fast response speed with rise time (tau(r1), tau(r2)) of (0.20 s, 1.81 s) and decay time (tau(d1), tau(d2)) of (0.02 s, 5.12 s) at -20 V bias was obtained. The results indicate that the photodetector based on beta-Ga2O3/n-Si isotype heterojunction has excellent sensitivity and selectivity to solar-blind ultraviolet light.
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