Journal
MATERIALS LETTERS
Volume 311, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2021.131592
Keywords
Dislocation type; Annihilation mechanism; Crystal growth; Chemical vapour deposition
Funding
- National Natural Science Foundation of China [61904139, 52192610]
- Natural Science Basic Research Plan in Shaanxi Province of China [2019JM-366]
- National Key Research and Development Program of China [2021YFA0715600]
- National Science Fund for Distinguished Young Scholars [61925404]
- Wuhu and Xidian University special fund for industry-university-research cooperation [XWYCXY-012020007]
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This work explores the difference between the annihilation of screw dislocation and edge dislocation, and finds that the density of edge dislocations remains almost unchanged during the growth from AlN to GaN. Through TEM analysis, it is discovered that the failure of AlGaN buffer layer and AlN insertion layer to block edge dislocations contributes to this phenomenon. This explanation may offer new insights for reducing dislocations and improving the crystal quality of GaN-on-Si.
In this work, we have found that there is a clear difference between the annihilation of screw dislocation and edge dislocation, and the density of edge dislocations remains almost unchanged during the growth from AlN to GaN. Through the transmission electron microscope (TEM), the internal mechanism of this phenomenon has been explored in this paper, which can be attributed to the failure of AlGaN buffer layer and AlN insertion layer to block the edge dislocation. The explanation proposed in this paper may provide new ideas to further reduce the dislocations in GaN-on-Si, improving the crystal quality.
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