Phase evolution and morphology in Cu-In-Ga sputtered precursors

The reaction of metallic precursors has become the primary method of industrial manufacturing for Cu(In,Ga)Se-2. Commonly used Cu3Ga sputter targets have thus far dictated that the relative Ga composition of these precursors is Ga/(In+Ga) & AP; 0.25. Cu-In-Ga precursors are prepared with varying DC sputtering conditions and Ga compositions ranging from 0 & LE; Ga/(In+Ga) & LE; 0.75. The phase evolution and morphology of these precursors is characterized using x-ray diffraction (XRD) and scanning electron microscopy, including in situ annealing of precursors during XRD measurements. It is observed that the Ga composition of as-deposited precursors affects phase evolution with annealing. Consistent morphology changes were not observed with changing Ga, however, film morphology was controlled by adjusting In sputter conditions.

Automated summary

The reaction of metallic precursors has become the primary method of industrial manufacturing for Cu(In,Ga)Se-2. Cu-In-Ga precursors with varying GPPS and Ga compositions were prepared. It was found that the Ga composition of as-deposited precursors affects phase evolution with annealing, while film morphology can be controlled by adjusting In sputter conditions.