Crystal structure and physical properties of the quaternary phase CuGaxIn5-xS8, 1.4= x = 2.05, in the Cu2S-Ga2S3-In2S3 system

X-ray diffraction and differential-thermal analysis methods were used for investigation of the component interaction in the Cu2S Ga2S3 - In2S3 system. The existence of the quaternary phase CuGa(x)In(5-x)S(8 )where 1.4 <=& nbsp;x <=& nbsp;2.05 at 820 K was confirmed. The crystal structure of the quaternary phase was determined by X-ray powder method for the CuGa1.6In3.4S8 composition as the trigonal symmetry, S.G. P-3m, with the cell parameters a = 0.38237(3) nm, c = 3.0870(2) nm. Five vertical sections and the liquidus surface projection of the system were investigated. A single crystal CuGa1.9In3.1S8 was grown by solution-melt method, and its physical parameters such as bandgap energy and photosensitivity range were investigated.

Automated summary

X-ray diffraction and differential-thermal analysis methods were used to investigate the interaction between components in the Cu2S Ga2S3 - In2S3 system. The presence of the quaternary phase, CuGa(x)In(5-x)S(8), with a range of 1.4 <= x <= 2.05 at 820 K was confirmed. The crystal structure of the quaternary phase was determined, and a single crystal CuGa1.9In3.1S8 was successfully grown by solution-melt method for further analysis of its physical properties.