Impact of bismuth titanate for microwave absorber application: a review

Bismuth titanate (BTO) owe to high dielectric constant, high dielectric losses, and high temperature coefficient of resonant frequency is considered to be one of the most prominent aspirants for microwave absorption applications. BTO and their composites are also used to diminish the electromagnetic interference in electrical devices, Airplanes, ships and tank radar signals. Several studies have been reported to enhanced the capability of BTO for microwave absorption applications. In such studies, the ferroelectric and dielectric characteristics of Bi4Ti3O12 are found to be improved by doping it with V, La, Sm, and Nd as compared to other dopants. However, Sm-Ta co doped BTO has shown high remanent polarization (46.2 emu/g) and coercive field (102 Oe). The highest dielectric loss was observed in vanadium doped Bi4Ti3O12 which enable it for high temperature applications.

Automated summary

Bismuth titanate (BTO) and its composites are considered as prominent candidates for microwave absorption applications due to their high dielectric constant and losses. Doping with V, La, Sm, and Nd can enhance the ferroelectric and dielectric characteristics of BTO, while V-doped BTO exhibits the highest dielectric loss suitable for high temperature applications.