Journal
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 103, Issue 2, Pages 319-334Publisher
SPRINGER
DOI: 10.1007/s10971-022-05785-1
Keywords
Ag-Cu co-doped ZnO films; Dispersion energy; Density of state; Plasma frequency; Sheet resistance; Conductivity
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Funding
- Jordan University of Science and Technology in Jordan
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This research successfully manufactured ZnO thin films with different co-doping levels of Ag-Cu using the sol-gel method by immersing technique. The impact of (Ag-Cu) co-doping on ZnO films' structural, morphology, optical, and electrical properties was investigated. Adding Ag-Cu as a co-doping in ZnO films enhanced the electrical conductivity, where the band gap energy and sheet resistance are decreased.
In this research, ZnO thin films with different co-doping levels of Ag-Cu were successfully manufactured using the sol-gel method by immersing technique. The impact of (Ag-Cu) co-doping on ZnO films' structural, morphology, optical, and electrical properties was investigated. XRD patterns revealed all films have crystalline nature with a hexagonal structure. The transmittance (7) and reflectance (R) spectra were employed to estimate numerous optical parameters; the refractive index (n) was also profoundly analyzed to evaluate dispersion parameters and other optoelectronic parameters. We found that adding Ag-Cu as a co-doping in ZnO films enhanced the electrical conductivity, where the band gap energy and sheet resistance are decreased. The results reported in this work may pave the way to manufacture thin films whose optical and electrical properties could be modified. Also, these composite films could be necessary for the fabrication of multifunctional modern optoelectronic and photovoltaic devices. [GRAPHICS] .
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