A high-voltage GaN quasi-vertical metal-insulator-semiconductor Schottky barrier diode on Si with excellent temperature characteristics

In this work, a GaN quasi-vertical metal-insulator-semiconductor Schottky barrier diode (MIS SBD) on Si is demonstrated for the first time. A 4.2 nm thick SiN dielectric is adopted to suppress the reverse leakage. Both the thermionic emission current and the tunneling current under reverse bias are reduced by the SiN interlayer. As a result, the leakage of the MIS SBD is effectively reduced by more than two orders of magnitude and the breakdown voltage (BV) is improved from 121 V for a conventional SBD to 288 V for the MIS SBD. The temperature-dependent reverse I-V characteristics show high-temperature stability of the MIS SBD and the leakage maintains a very low level even at a high temperature of 400 K. In addition, the interface state density is extracted using the conductance method. The quasi-vertical MIS SBD structure exhibits an enhanced BV and excellent temperature characteristics, which indicate that this technique holds great promise for future high-power and high-temperature applications.

Automated summary

This study demonstrates for the first time a GaN quasi-vertical metal-insulator-semiconductor Schottky barrier diode (MIS SBD) on Si. The adoption of a 4.2 nm SiN dielectric effectively suppresses the reverse leakage, reducing both the thermionic emission current and the tunneling current. The MIS SBD exhibits significantly reduced leakage and improved breakdown voltage (BV), as well as high-temperature stability. The quasi-vertical MIS SBD structure holds great promise for future high-power and high-temperature applications.