Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device

The bipolar resistive switching (BRS) phenomenon was demonstrated in Mn3O4 using an aluminium/Mn3O4/ fluorine-doped tin oxide resistive random access memory (RRAM) device. The fabricated RRAM device showed good retention, non-volatile behaviour, and forming-free BRS. The current-voltage characteristics and the temperature dependence of the resistance measurements were used to explore conduction mechanisms, thermal activation energy, and temperature coefficient of resistance. The resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) was similar to 102. The device showed different conduction mechanisms in LRS and HRS modes, such as ohmic conduction and space charge limited conduction. The formation and rupture of conducting filaments of oxygen vacancies took place by changing the polarity of external voltage, which may be responsible for resistive switching characteristics in the device. This device is suitable for application in future high-density non-volatile memory RRAM devices.

Automated summary

This study demonstrated the bipolar resistive switching phenomenon in Mn3O4 using an aluminium/Mn3O4/fluorine-doped tin oxide resistive random access memory (RRAM) device. It explored conduction mechanisms, thermal activation energy, and temperature coefficient of resistance, showing potential application in future high-density non-volatile memory RRAM devices.