4.6 Article

Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 126, Issue 11, Pages 5206-5217

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.1c10466

Keywords

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Funding

  1. MEXT Quantum Leap Flagship Program (MEXT Q-LEAP) [JPMXS0120330644, JPMXS0118067395]
  2. Japan Society for the Promotion of Science, KAKENHI [20H00453, 18K19297, 21H04444]
  3. The Branco Weiss Fellowship -Society in Science

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This study focuses on the formation mechanism of NV- centers in 5 nm detonation nanodiamonds (DNDs) and finds that it is different from high-pressure high-temperature synthesized nanodiamonds. The study also discovers that the NV- concentration in 5 nm DNDs exceeds that of 20 nm-sized nanodiamonds.
Nanodiamonds containing negatively charged nitrogen-vacancy (NV-) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding the NV- formation mechanism in very small particles is still limited. This study focuses on the formation of the smallest NV(-)containing diamonds, 5 nm detonation nanodiamonds (DNDs). As a reliable method to quantify NV- centers in nanodiamonds, half-field signals in electron paramagnetic resonance (EPR) spectroscopy are recorded. By comparing the NV concentration with a series of nanodiamonds from high-pressure high-temperature (HPHT) synthesis (10-100 nm), it is shown that the formation process in 5 nm DNDs is unique in several aspects. NV- centers in DNDs are already formed at the stage of electron irradiation, without the need for high-temperature annealing, an effect related to the very small particle size. Also, the NV- concentration (in atomic ratio) in 5 nm DNDs surpasses that of 20 nm-sized nanodiamonds, which contradicts the observation that the NV- concentration generally increases with particle size. This can be explained by the 10 times higher concentration of substitutional nitrogen atoms in the studied DNDs ([N-s approximate to 1000 ppm]) compared to the HPHT nanodiamonds ([N-s approximate to 100 ppm]). Upon electron irradiation at a fluence of 1.5 x 10(19) e(-)/cm(2), DNDs show a 12.5-fold increment in the NV- concentration with no sign of saturation reaching 1 out of about 80 DNDs containing an NV- center. These findings can be of interest for the creation of defects in other very small semiconductor nanoparticles beyond NV-nanodiamonds as quantum sensors.

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