4.6 Article

Real Temperature Model of Dynamic Disorder in Molecular Crystals

Journal

JOURNAL OF PHYSICAL CHEMISTRY A
Volume 126, Issue 20, Pages 3265-3272

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpca.2c02120

Keywords

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Funding

  1. Lehigh University
  2. NSF [2019035]
  3. National Science Foundation [ACI-1548562]

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This article introduces a method of improving charge carrier mobility in ordered organic semiconductors through molecular substitutions. By studying organic single crystals, specific vibrational phonons that are detrimental to carrier mobility are identified, and certain motion modes are found to be beneficial. The study also reveals that the high mobility of rubrene may be attributed to the absence of a specific detrimental phonon in its crystal structure.
Charge carrier mobilities in ordered organic semiconductors are limited by inherent vibrational phonons that scatter carriers. To improve a material's intrinsic mobility, restricting particularly detrimental modes with molecular substitutions may be a viable strategy. Here, we develop a probabilistic temperature-dependent displacement model that we couple with the density functional dimer projection protocol to predict effective electronic / coupling fluctuations. The phonon-induced deviations from the equilibrium electronic couplings are used to infer the detriment of low-frequency phonons on charge carrier mobilities in a set of organic single crystals. We show that asymmetric sliding motions in pentacene and 2,6-diphenylanthracene induce large electronic coupling fluctuations, whereas seesawlike motions cause large fluctuations in rubrene, 9,10-diphenylanthracene, and, 2,6-diphenylanthracene. Vibrational analyses revealed that the asymmetric sliding phonon in rubrene persists only in the low-mobility direction of the crystal. Therefore, rubrene's intrinsic high mobility is likely due to the absence of this source of disorder in its high-mobility conduction channels. This model can be used to identify particularly harmful or helpful phonons in crystalline materials and may provide design rules for developing materials with intrinsically low disorder.

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