Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 666, Issue -, Pages 88-92Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.01.073
Keywords
GaN; ZnO; XRD; LED; TCO
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Funding
- National Research Foundation of Korea (NRF) from Ministry of Education, Science and Technology, [NRF-2013R1A1A1007475]
- Human Resources Program in the Transportation Specialized Lighting Core Technology Development from Ministry of Trade, Industry and Energy, Republic of Korea [N0001364]
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We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11-22) GaN template by atomic layer deposition (ALD) at low growth temperatures (<200 degrees C). The surface morphology of the ZnO film is found to be an arrowhead-like structure, which is a typical surface structure of the semipolar (11 -22) GaN films. On increasing the growth temperature of the ZnO films, the concentration and mobility of the charge carriers in the ZnO film are increased. However, the optical transmittance decreases with an increase in the growth temperature. Based on these results, we have fabricated semipolar (11-22) GaN-based light-emitting diodes (LEDs) with nonpolar m-plane ZnO film as a transparent conductive oxide (TCO) to improve the light extraction efficiency. In spite of a decrease in the optical transmittance, the operation voltage of semipolar (11-22) GaN-based LEDs is found to decrease with an increase in the growth temperature, which might be due to the improvements in the electrical properties and current spreading effect, resulting in an increase in the optical output power. (C) 2016 Elsevier B.V. All rights reserved.
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