Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 660, Issue -, Pages 136-140Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.11.145
Keywords
Solar-blind; Ultraviolet photodetector; Ga2O3; Heterojunction
Categories
Funding
- National Natural Science Foundation of China [51572033, 11404029, 51172208, 61274017]
- Beijing Natural Science Foundation [2154055]
- Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT)
- Fundamental Research Funds for the Central Universities [2014RC0906]
- China Postdoctoral Science Foundation [2014M550661]
- National Basic Research Program of China (973 Program) [2010CB923202]
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In this work, ((2) over bar 01) oriented beta-Ga2O3 thin films have been grown on p-type silicon (100) substrates by laser molecular beam epitaxy. beta-Ga2O3/Si pen heterojunctions are formed as a deep ultraviolet ( UV) solar-blind photodetector. Those heterojunctions exhibit obvious rectifying characteristics and excellent solar-blind UV photoresponse. The responsivity reaches 370 A/W at 3 V reverse bias under 254 nm UV irradiation. The corresponding external quantum efficiency is over 1.8 x 10(5)%. The combination of wide bandgap semiconductor with silicon might open up possibilities for future generation deep UV solar-blind optoelectronic devices. (C) 2015 Elsevier B.V. All rights reserved.
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