Defect structure and electrical properties of vanadium pentoxide thin films

The point defect structure of V2O3, VO2, and V2O5 is reviewed. VO2 and V2O5 thin films were deposited by means of RF sputtering from a metallic V target in a reactive Ar + O-2 atmosphere. Rutherford backscattering (RBS) and secondary-ion mass spectrometry (SIMS) were used to determine the chemical and phase composition as well as the profile distribution of elements in as-sputtered and hydrogen-treated VO2 films. The electrical properties of the V2O5 thin films were determined by means of impedance spectroscopy. At elevated temperatures thin films were found to interact with oxygen. Both singly and doubly ionized oxygen vacancies and electrons were the product of these interactions. The chemical diffusion coefficient was determined by measurements of transient electrical conductivity.

Automated summary

The point defect structure of V2O3, VO2, and V2O5 is reviewed in this paper. VO2 and V2O5 thin films were deposited and their chemical and phase composition as well as the distribution of elements were characterized using RBS and SIMS. Electrical properties of V2O5 thin films were measured using impedance spectroscopy. It was found that the thin films interacted with oxygen at elevated temperatures, resulting in the formation of oxygen vacancies and electrons.