E-beam-deposited Zr2NiS4-GO alloy thin film, a tenacious photocatalyst and efficient electrode for electrical devices

Hybrid composites of metal sulphides conjugated graphene oxide have engrossed the scientific community recently owing to their enhanced characteristics. Present research describes the synthesis of (Zr-Ni)sulphide-GO composite thin film by diethyldithiocarbamate ligand deposited through E-beam deposition. Synthesized thin films were characterized through XRD, UV-visible spectrophotometer, FTIR and SEM-EDX analysis. The cubic Zr2NiS4-GO thin film possessed a direct bandgap of 3.4 eV, and a hexagonal crystal system. The efficient photocatalytic degradation property of the thin film was investigated with an enhanced removal of pesticide and phenol, whereas a moderate degradation of dye was observed. Photocatalytic pesticide removal was 83% under 60 min whereas similar to 70% up to four successive cycles. A high specific capacitance of 438.5 F (-1) proved the thin film as an excellent electrode for supercapacitors. The impressive photocatalytic and electrochemical properties of the [ZrNi]S-GO thin film present it as a superlative material for practical use in electrical and environmental remediation devices.

Automated summary

This study successfully synthesized (Zr-Ni)sulphide-GO composite thin film with efficient photocatalytic degradation performance, excellent electrochemical properties, and high specific capacitance, making it suitable for electrical and environmental remediation devices.