Bilinear magnetoresistance in topological insulators: The role of spin-orbit scattering on impurities

Bilinear magnetoresistance (BMR) is a new kind of magnetoresistance, that scales linearly with electric and magnetic fields. This magnetoresistance occurs in systems with strong spin-orbit interaction. Additionally, this interaction also leads to quadratic magnetoresistance (QMR). We consider theoretically BMR and QMR in surface states of 3D topological insulators, and propose a new mechanism that leads to these effects. This mechanism is based on scattering on spin-orbit impurities. Accordingly, we assume the minimal model of surface electronic states in a single independent surface of a TI, and calculate both BMR and QMR induced as an interplay of current-induced spin polarization (or equivalently effective spin-orbit field) and spin-orbit scattering on impurities. We present detailed characteristics of both BMR and QMR, and compare our results with those obtained for TIs with spin-momentum locking inhomogeneities and hexagonal warping of the Dirac cones.

Automated summary

The study examines bilinear magnetoresistance (BMR) and quadratic magnetoresistance (QMR) in systems with strong spin-orbit interaction, proposing a new mechanism based on scattering on spin-orbit impurities. Detailed characteristics of both BMR and QMR are presented and compared with results obtained for systems with spin-momentum locking inhomogeneities and hexagonal warping of the Dirac cones.