Journal
JOURNAL OF LUMINESCENCE
Volume 245, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jlumin.2022.118773
Keywords
Near-infrared; Light-emitting diodes; Tm-Ga2O3
Categories
Funding
- Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science, and Technology, Japan
- Japan Society for Promotion of Science (JSPS KAKENHI) [19K04492]
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Near-infrared (NIR) light-emitting diodes (LEDs) based on Tm-Ga2O3/GaAs were fabricated and characterized. The strongest NIR emission at 794 nm and the major blue emission at 476 nm were observed, with different turn-on voltages. These results provide insights for the development of Ga(2)O(3)-based LEDs for NIR applications.
Near-infrared (NIR) light-emitting diodes (LEDs) based on Tm-Ga2O3/GaAs were fabricated by pulsed laser deposition. The strongest NIR emission observed at 794 nm can be assigned to the 3H4-3H6 transition. The major blue emission detected at 476 nm can be attributed to the 1G4 -3H6 transition. The turn-on voltage of 794 nm emission is 5.5 V lower than 6.9 V for 476 nm emission. The ratio of the 794 to 476 nm emission intensities of Tm-Ga2O3/GaAs LEDs is close to a constant of 11.4. These results open a pathway for Ga(2)O(3)based LEDs used in NIR application.
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