Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 684, Issue -, Pages 663-668Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.05.229
Keywords
Superlattice; Sb-based material; Detector; Electronic properties; Optical properties
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Funding
- National Basic Research Program of China (973 Program) [2015CB351902, 2012CB619203, 2015CB932402]
- National Natural Science Foundation of China (NSFC) [11374295, 61177070, U1431231]
- National Key Research Program of China [2011ZX01015-001]
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We propose a high performance N-structure type-II superlattice (T2SL) photodetector for long wavelength infrared (LWIR) applications. Theoretical study on the electrical and optical properties of the N-structure T2SL LWIR detector with different carrier concentration and different thicknesses in the p-region is carried out. We obtain the relationship of material parameters and performance parameters. With the increasing of the thickness of p-region, quantum efficiency (QE) gradually improves. In contrast, zero-bias resistance area (R(0)A) product decreases. QE will significantly decreases when the carrier concentration of p-region is too high, while R(0)A first increases, then decreases. The results show that the performance of the N-structure T2SL LWIR detector can be state of the art by optimizing the carrier concentration and material thickness during the structure growth and device fabrication. (C) 2016 Elsevier B.V. All rights reserved.
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