Related references
Note: Only part of the references are listed.Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement
David Z. Ting et al.
APPLIED PHYSICS LETTERS (2021)
Long Wavelength InAs/InAsSb Infrared Superlattice Challenges: A Theoretical Investigation
David Z. Ting et al.
JOURNAL OF ELECTRONIC MATERIALS (2020)
Infrared absorption near the bandgap in the InAs/InAsSb superlattice
David R. Rhiger et al.
INFRARED SENSORS, DEVICES, AND APPLICATIONS X (2020)
Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate
Q. Durlin et al.
INFRARED PHYSICS & TECHNOLOGY (2019)
Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon
Evangelia Delli et al.
ACS PHOTONICS (2019)
The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors
David Z. Ting et al.
INFRARED TECHNOLOGY AND APPLICATIONS XLV (2019)
Mid-wavelength high operating temperature barrier infrared detector and focal plane array
David Z. Ting et al.
APPLIED PHYSICS LETTERS (2018)
Surface dark current mechanisms in III-V infrared photodetectors [Invited]
B. T. Marozas et al.
OPTICAL MATERIALS EXPRESS (2018)
Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
K. Michalczewski et al.
INFRARED PHYSICS & TECHNOLOGY (2018)
InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb
David Z. Ting et al.
IEEE PHOTONICS JOURNAL (2018)
Type-II superlattice hole effective masses
David Z. Ting et al.
INFRARED PHYSICS & TECHNOLOGY (2017)
Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector
Ruiting Hao et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Development and Production of Array Barrier Detectors at SCD
P. C. Klipstein et al.
JOURNAL OF ELECTRONIC MATERIALS (2017)
Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials
I. Vurgaftman et al.
APPLIED PHYSICS LETTERS (2016)
Hole effective masses and subband splitting in type-II superlattice infrared detectors
David Z. Ting et al.
APPLIED PHYSICS LETTERS (2016)
Surface Leakage Mechanisms in III-V Infrared Barrier Detectors
D. E. Sidor et al.
JOURNAL OF ELECTRONIC MATERIALS (2016)
Surface Conduction in InAs and GaSb
D. E. Sidor et al.
NANOPHOTONICS AND MACROPHOTONICS FOR SPACE ENVIRONMENTS IX (2015)
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
A. M. Hoang et al.
APPLIED PHYSICS LETTERS (2014)
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
A. Haddadi et al.
APPLIED PHYSICS LETTERS (2014)
Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors
P. C. Klipstein et al.
JOURNAL OF ELECTRONIC MATERIALS (2014)
Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector
David Z. -Y. Ting et al.
APPLIED PHYSICS LETTERS (2013)
Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices
L. Hoeglund et al.
APPLIED PHYSICS LETTERS (2013)
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
B. V. Olson et al.
APPLIED PHYSICS LETTERS (2012)
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
H. S. Kim et al.
APPLIED PHYSICS LETTERS (2012)
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
E. H. Steenbergen et al.
APPLIED PHYSICS LETTERS (2011)
Rule 07 Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?
W. E. Tennant
JOURNAL OF ELECTRONIC MATERIALS (2010)
A high-performance long wavelength superlattice complementary barrier infrared detector
David Z-Y Ting et al.
APPLIED PHYSICS LETTERS (2009)
Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
B. -M. Nguyen et al.
APPLIED PHYSICS LETTERS (2009)
Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors
J. R. Pedrazzani et al.
ELECTRONICS LETTERS (2008)
nBn detector, an infrared detector with reduced dark current and higher operating temperature
S. Maimon et al.
APPLIED PHYSICS LETTERS (2006)
Share Paper
