Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

Thin films of Bi2Se3 were deposited on Si (100) substrates using RF magnetron sputtering at a deposition temperature of 633 K. The surface morphology of Bi2Se3 films revealed the variation of grain sizes with thickness, while elemental analysis showed the stoichiometric Bi2Se3 films. The high-intensity x-ray diffraction peaks along (0003), (0006) and (00015) planes showed the dominant orientation of Bi2Se3 along the c-axis on Si (100). Three prominent Raman characteristic peaks, E-g(2), A(1g)(1), and A(1g)(2) modes, were observed which revealed a pure hexagonal phase. X-ray photoelectron spectroscopy analysis showed the growth of high-purity Bi2Se3 films. The temperature-dependent electrical conductivity measurements showed the increase in conductivity with temperature due to the semiconducting nature. Seebeck coefficient of these films falls in the range of -153 to -236 mu V/K near room temperature. These findings pave the way for economically preparing large-area and high-performance Bi2Se3 thin films for future thermoelectric devices. [GRAPHICS] .

Automated summary

In this study, Bi2Se3 thin films were successfully fabricated on Si (100) substrates using RF magnetron sputtering. The as-deposited films exhibited a pure hexagonal phase and stoichiometric composition of Bi2Se3. Various analyses revealed their high-purity nature and good electrical conductivity, making them promising candidates for future thermoelectric devices.