Journal
JOURNAL OF CRYSTAL GROWTH
Volume 588, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2022.126657
Keywords
A1; Low dimensional structures; A3; Molecular beam epitaxy; B1; Nanomaterials; B2; Semiconducting III-V materials
Funding
- JSPS KAKENHI [16H03858, 20H02183]
- JST A-STEP
- Consortium of Higher Education Institutions in Wakayama
- Grants-in-Aid for Scientific Research [20H02183, 16H03858] Funding Source: KAKEN
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This study proposes a method to estimate the emission wavelength of self-assembled InAs quantum dots (QDs) embedded in a capping layer using reflection high-energy electron diffraction (RHEED) intensity measurements. The relationship between the decay degree of RHEED intensity and the photoluminescence peak energy of embedded QDs was analyzed and determined, which can be used to predict the emission wavelength of embedded QDs during capping, particularly beneficial for QD-based optical device fabrication.
We propose a method for estimating the emission wavelength of self-assembled InAs quantum dots (QDs) embedded in a capping layer using reflection high-energy electron diffraction (RHEED) intensity measurements. As QDs are capped with a Ga(In)As layer, the RHEED intensity of QDs decays, and the decay degree depends on the growth conditions of capping. The RHEED intensity decay was analyzed, and a relationship between the decay degree and photoluminescence peak energy of embedded QDs was determined. This relationship can be used to predict the emission wavelength of embedded QDs during capping, which is particularly useful for QDbased optical device fabrication.
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