Bismuth incorporation and its influence on surface morphology of InAs (110)

The low solid solubility of Bi in III-V semiconductors complicates achieving high Bi incorporation in those films. Crystalline orientation is often overlooked as a parameter that can be used to influence Bi incorporation. This study investigates the differences in Bi incorporation in superlattice structures grown on InAs(0 0 1) versus InAs (1 1 0). X-ray diffraction reveal distinct differences in Bi incorporation between the two surfaces as a function of whether or not Bi droplets formed on the surface during growth. Atomic force microscopy shows that the surface morphology also changes as a function of the amount of Bi deposited. Finally we discuss possible mechanisms explaining the changes in Bi incorporation and surface morphology.

Automated summary

This study investigates the differences in Bi incorporation in superlattice structures grown on InAs(0 0 1) versus InAs(1 1 0) and reveals the influence of crystal orientation and surface morphology on Bi incorporation. X-ray diffraction and atomic force microscopy results show that the presence or absence of Bi droplets on the surface during growth and the amount of deposited Bi affect the Bi incorporation and surface morphology.