4.7 Article

Resonant defect recombination-localized surface plasmon energy transfer and exciton dominated fluorescence in ZnO-Au-ZnO multi-interfaced heteronanocrystals

Journal

JOURNAL OF CHEMICAL PHYSICS
Volume 156, Issue 17, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0092035

Keywords

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Funding

  1. National Natural Science Foundation of China [11874106]

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The study presents the fabrication of epitaxial pyramidal ZnO-Au HNCs and investigates their unique photophysical properties. Strong coupling between ZnO NC green defect-related recombination and localized surface plasmon resonance of Au nanospheres leads to nearly complete quenching of green defect luminescence in the ZnO NCs.
The semiconductor-metal heteronanocrystals (HNCs) that possess a perfect epitaxial interface can accommodate novel and interesting physical phenomena owing to the strong interaction and coupling between the semiconductor excitons and metal plasmons at the interface. Here, we fabricate the pyramidal ZnO-Au HNCs and study their unique photophysical properties. Several Au nanospheres are perfectly epitaxially bound with a single ZnO NC owing to the small lattice mismatch between them and there are also ZnO-Au-ZnO sandwiched HNCs. There is a strong coupling between the green defect-associated recombination in the ZnO NC and the localized surface plasmon resonance (LSPR) of the Au nanosphere at the interface of the HNC. This leads to resonant defect recombination-LSPR energy transfer and resultant nearly complete quenching of the green defect luminescence of the ZnO NCs in the HNCs, leaving only the UV exciton luminescence. The lifetimes of both the green and UV emission bands decrease significantly in the ZnO-Au HNCs relative to that of the pure ZnO NCs owing to the combined effect of resonance energy transfer and surface plasmon enhanced radiative transition. The exponent of the luminescence intensity-excitation intensity power function for the green emission band is remarkably smaller than unity, and this suggests that the involved defects have an intermediate concentration. Published under an exclusive license by AIP Publishing.

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