4.8 Article

Removing semiconductor-cocatalyst interfacial electron transfer induced bottleneck for efficient photocatalysis: A case study on Pt/CdS photocatalyst

Journal

JOURNAL OF CATALYSIS
Volume 408, Issue -, Pages 270-278

Publisher

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcat.2022.03.014

Keywords

Thermionic emission; Charge recombination; Interfacial electron transfer; Potential barriers; Photocatalysis

Funding

  1. National Natural Science Foundation of China [21773285, 91545116, U1932128, U1510108]
  2. Natural Science Foundation of Shanxi Province [201901D211590]
  3. CAS Pioneer Hundred Talents Program
  4. Institute of Coal Chemistry

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Bridging the semiconductor-cocatalyst contact with metals of appropriate work function significantly reduces the barrier for interfacial electron transfer, leading to an unprecedented hydrogen evolution rate in the demonstrated photocatalyst.
Sunlight-driven photocatalytic hydrogen evolution represents a promising strategy to sustainable clean energy supply. This approach, however, is limited due to low rate even after replacing the sluggish oxygen evolution with efficient hole-extraction, because the very high barrier severely slows the supply of photogenerated electrons to the cocatalysts. Here, we bridge semiconductor-cocatalyst contact with metals that are of appropriate work function. This measure lowers the barrier for interfacial electron transfer by 800 meV in our demonstrated Pt/CdS photocatalyst. By this merit, the photocatalyst with intermediate metal delivers an unprecedented hydrogen evolution rate of 1.87 mmol dm(-2) h(-1) (37.4 mmol g(-1) h(-1)) under sunlight (AM 1.5G, 100 mW/cm(2)) and linearly increases to 18.39 mmol dm(-2) h(-1) (367.8 mmol g(-1) h(-1)) by intensifying the illumination to 940 mW/cm(2) (AM 1.5G). (C) 2022 Elsevier Inc. All rights reserved.

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