Journal
JOURNAL OF APPLIED PHYSICS
Volume 131, Issue 11, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0073650
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Funding
- Research Grants Council of Hong Kong [AoE/P-701/20, 14203018]
- CUHK Group Research Scheme
- CUHK/CAS Joint Research Laboratory Scheme
- Innovation and Technology Commission, Hong Kong SAR Government [ITS/390/18]
- National Natural Science Foundation of China (NNSFC) [62005051]
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2D MoTe2 material shows excellent performance in phase-controlled epitaxial growth and phase transition, with the ability to fabricate large-scale semiconducting MoTe2 single crystals and achieve ideal contact geometry.
Because silicon transistors are approaching the limit of device miniaturization, 2D semiconductors show great promise in electronic devices as post-silicon alternatives. However, critical bottlenecks that impede applications remain in 2D material-based devices, such as the lack of scalable fabrication techniques of highly crystalline samples and the challenge of contact resistance. In this Perspective, we review the recently developed 2D MoTe2 as an excellent material in phase-controlled epitaxial growth and phase transition. The high flexibility in phase engineering of MoTe2 enables (1) wafer-scale fabrication of semiconducting MoTe2 single crystals and (2) intrinsically ideal contact geometry for high-performance electronic devices.
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