Room temperature magnetic field modulation of diode-like behavior in Ca-doped BiFeO3 thin films

Bi1-xCaxFeO3 (x = 0, 0.1) thin films were synthesized by a sol-gel spin coating method. A diode-like current-voltage characteristic was investigated in a Bi0.9Ca0.1FeO3 (BCFO) thin film. By Ca element doping, the current-voltage characteristic was changed from a traditional symmetric variation to a diode-like behavior. Besides, the modulation effects of a magnetic field on Pt/BCFO/Pt/Ti/SiO2/Si devices have been investigated. Using some micro-analysis methods, such as x-ray photoelectron spectroscopy and transmission electron microscopy, possible mechanisms were discussed on the basis of an oxygen vacancy modulated Schottky-like barrier. The control of the resistance state with the magnetic field means larger degrees of freedom, and this is crucial for further application of BiFeO3-based materials in higher density memory devices. Published under an exclusive license by AIP Publishing.

Automated summary

By doping Ca element into BiFeO3 thin films, the electronic transport properties can be altered, and modulation with a magnetic field can impact the electron transport behavior of devices, which is crucial for enhancing the application of BiFeO3 materials in higher density memory devices.