Related references
Note: Only part of the references are listed.Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
Hideki Sakurai et al.
APPLIED PHYSICS EXPRESS (2021)
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
K. Shima et al.
APPLIED PHYSICS LETTERS (2021)
Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors
D. O. Demchenko et al.
PHYSICAL REVIEW LETTERS (2021)
Measurement and analysis of photoluminescence in GaN
Michael A. Reshchikov
JOURNAL OF APPLIED PHYSICS (2021)
Substantial P-Type Conductivity of AlN Achieved via Beryllium Doping
Habib Ahmad et al.
ADVANCED MATERIALS (2021)
P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing
V. Meyers et al.
JOURNAL OF APPLIED PHYSICS (2021)
Point defects in beryllium-doped GaN
Mykhailo Vorobiov et al.
PHYSICAL REVIEW B (2021)
Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
Masahiro Takahashi et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)
Investigation of diffusion mechanism of beryllium in GaN
Rafal Jakiela et al.
PHYSICA B-CONDENSED MATTER (2020)
High Pressure Processing of Ion Implanted GaN
Kacper Sierakowski et al.
ELECTRONICS (2020)
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
Hideki Sakurai et al.
APPLIED PHYSICS LETTERS (2019)
Extremely Slow Decay of Yellow Luminescence in Be-Doped GaN and Its Identification
Matthias Lamprecht et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
Two charge states of the C(N)( )acceptor in GaN: Evidence from photoluminescence
M. A. Reshchikov et al.
PHYSICAL REVIEW B (2018)
Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
Henryk Teisseyre et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites
Filip Tuomisto et al.
PHYSICAL REVIEW LETTERS (2017)
Evaluation of the concentration of point defects in GaN
M. A. Reshchikov et al.
SCIENTIFIC REPORTS (2017)
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam
Akira Uedono et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties
Jordan D. Greenlee et al.
JOURNAL OF APPLIED PHYSICS (2014)
Green luminescence in Mg-doped GaN
M. A. Reshchikov et al.
PHYSICAL REVIEW B (2014)
Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN
John L. Lyons et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Migration kinetics of ion-implanted beryllium in ZnO and GaN
O. Koskelo et al.
PHYSICA SCRIPTA (2013)
Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state
Stephan Lany et al.
APPLIED PHYSICS LETTERS (2010)
p-type conduction in beryllium-implanted hexagonal boron nitride films
B. He et al.
APPLIED PHYSICS LETTERS (2009)
Possible efficient p-type doping of AlN using Be:: An ab initio study
R. Q. Wu et al.
APPLIED PHYSICS LETTERS (2007)
Be and Mg co-doping in GaN
A. Kawaharazuka et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Determination of acceptor concentration in GaN from photoluminescence
M. A. Reshchikov
APPLIED PHYSICS LETTERS (2006)
Photoluminescence study of bulk GaN doped with beryllium
M Jaworek et al.
ACTA PHYSICA POLONICA A (2005)
Luminescence properties of defects in GaN -: art. no. 061301
MA Reshchikov et al.
JOURNAL OF APPLIED PHYSICS (2005)
Pressure behavior of beryllium-acceptor level in gallium nitride
H Teisseyre et al.
JOURNAL OF APPLIED PHYSICS (2005)
Rutherford backscattering analysis of GaN decomposition
HW Choi et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Effect of Be++O+ coimplantation on Be acceptors in GaN
Y Nakano et al.
APPLIED PHYSICS LETTERS (2003)
Growth of Be-doped p-type GaN under invariant polarity conditions
S Sugita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
DF Storm et al.
APPLIED PHYSICS LETTERS (2002)
In situ gravimetric monitoring of decomposition rate from GaN (0001) and (000(1)over-bar) surfaces using freestanding GaN
M Mayumi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2001)