Self-powered CsCu2I3/Si heterojunction UV photodetectors prepared by pulsed-laser deposition

All-inorganic perovskite CsCu2I3 thin films have been prepared on Si(100) substrates by pulsed laser de-position technology. And the influence of the substrate temperatures on the morphology, structure and optical properties of the CsCu2I3 films was investigated by SEM, XRD, PL and absorption spectra. A prototype CsCu2I3/Si n-n heterojunction UV photodetection device was constructed with LiF/Al and Au Ohmic contact electrodes. The photodetector demonstrates excellent self-powered photoresponse performance with an on/off ratio of similar to 2150 at 0 V. The device also exhibits good spectral selectivity and photoresponse characteristics in the UV range (280-370 nm). The peak responsivity (R) and specific detectivity (D*) of the CsCu2I3/Si heterojunction device are 7.1 mA/W and 2.6 x 10(11) Jones at 0 V and 330 nm (similar to 700 mu W/cm2) light illumination, and shows good stability and reproducibility. (c) 2022 Elsevier B.V. All rights reserved.

Automated summary

All-inorganic perovskite CsCu2I3 thin films were prepared on Si(100) substrates using pulsed laser deposition technology. The morphology, structure, and optical properties of CsCu2I3 films were investigated, and a CsCu2I3/Si n-n heterojunction UV photodetection device was constructed. The device demonstrated excellent self-powered photoresponse performance and good spectral selectivity in the UV range.