Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 900, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.163120
Keywords
N-type epsilon-Ga2O3; PLD; Schottky diode
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Funding
- National Natural Science Foundation of China (NSFC) [61774116, 61974112, 61974115]
- 111 Project [B12026]
- Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation [XWYXCY-012020011]
- State Key Laboratory of Luminescence and Applications [SKLA -2020-04]
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The study focused on tin-assisted pure phase n-type ZrO2-doped epsilon-Ga2O3 films grown on epi-GaN/sapphire substrates using pulsed laser deposition. The thin films were characterized for their crystal structure and electrical properties, with a Schottky barrier diode exhibiting high rectification ratio and breakdown voltage. Interface states density and trap energy levels were also analyzed, showing promising results for potential applications.
Tin-assisted pure phase n-type ZrO2-doped epsilon-Ga2O3 films were synthesized by pulsed laser deposition (PLD) and deposited on (0001) epi-GaN/sapphire substrates. The characterization of n-type ZrO2-doped epsilon-Ga2O3 thin films and the electrical properties of SBD based on that film were investigated in details. From XRD, the pure Zr-doped epsilon-Ga2O3 without diffraction peaks of zirconia suggested the formation of epsilon-(ZrxGa1-x)(2)O-3 solid solution. The surface morphology and chemical content of the epsilon-Ga2O3 thin film were studied by AFM and XPS. The electrical resistivity and related free carrier concentration at room temperature were measured to be 108 Omega middotcm and 5.5 x 10(15) cm(-3), respectively, and mobility up to 10.3 cm(2)/Vmiddots. The Schottky barrier diode possessed a rectification ratio up to 10(6)similar to 10(7), breakdown voltage of 392 V, and the interface states density from 2.4 x 10(13) cm(-2) eV(-1) to 6.4 x 10(14) cm(-2) eV(-1) with the trap energy level from 0.89 eV to 0.94 eV below the bottom of the conduction band. (C) 2021 Published by Elsevier B.V.
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