F, Mg and Ga co-doped ZnO transparent conductive thin films by dual- target magnetron sputtering: Fabrication, structure, and characteristics

F, Mg and Ga co-doped ZnO (FMGZO) films are deposited on glass substrates at room temperature by magnetron sputtering using MgF2 and ZnO:Ga targets. The effects of RF sputtering power applied to the MgF2 target on structure, morphology, composition, electrical and optical properties of the films are investigated in detail. The experimental results show that all samples are polycrystalline films with hexagonal wurtzite structure and low surface roughness. The FMGZO film deposited at RF sputtering power of 15 W exhibits the highest figure of merit of 5.66 x 10-2 Omega(-1) with the resistivity of 6.5 x 10(-4) Omega cm, the carrier concentration of 4.12 x 1020 cm(-3) and the Hall mobility of 23.38 cm(2)/V s, while the average optical transmittance is as high as 95.23% in the visible range. The photoelectric performance of the FMGZO film is significantly higher than that of previously reported co-doped ZnO films, which makes it suitable for various high-efficiency optoelectronic devices. (c) 2022 Elsevier B.V. All rights reserved.

Automated summary

F, Mg and Ga co-doped ZnO (FMGZO) films were deposited on glass substrates at room temperature using magnetron sputtering. The effects of RF sputtering power on the structure, morphology, composition, electrical and optical properties of the films were investigated. The results showed that the FMGZO film deposited at an RF sputtering power of 15 W exhibited excellent electrical and optical performance, surpassing previously reported co-doped ZnO films.