4.7 Article

High-temperature Bi2Te3 thermoelectric generator fabricated using Cu nanoparticle paste bonding

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 896, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.163060

Keywords

Bi2Te3; Thermoelectric power generator; Copper nanoparticle; Lead-free solder; Spark plasma sintering

Funding

  1. DGIST R&D Program of the Ministry of Science and ICT of Korea [21-ET-07]
  2. National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2021R1A5A8033165]
  3. National Research Foundation of Korea [21-ET-07] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study investigated the application of Cu nanoparticle paste (CNP) bonding for increasing the operating temperature of Bi2Te3-based TEG devices and confirmed its effectiveness through experiments. Optimal bonding was achieved through spark plasma sintering, and the devices maintained high output power after thermal cycling.
For the successful commercialization of Bi2Te3-based thermoelectric generator (TEG) devices, not only highly efficient TE materials, but also reliable bonding materials with high thermal stability are essential. In this study, we investigated the application of Cu nanoparticle paste (CNP) bonding for increasing the operating temperature of Bi2Te3-based TEG devices. Six-chip TEG devices were fabricated by joining surfacemetalized Bi2Te3-based TE chips and Cu electrodes by CNP bonding. The optimal bonding was achieved when spark plasma sintering was carried out at 310-320 degrees C and 15 MPa. The 6-chip Bi2Te3-based TEG devices showed a maximum output power of 50-60 mW at the hot-side temperature of 400 degrees C (Delta T= 380 degrees C) and maintained almost the same output power after five thermal cycles. The scanning electron microscopy images of the thermally cycled electrodes further confirmed the robustness of the Cu nanoparticle joints. This work provides an effective method for joining TE chips and Cu electrodes for high-temperature TEG devices. (C) 2021 Published by Elsevier B.V.

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