Electrical, linear and non-linear optical properties of MoSe2/PVA nanocomposites as charge trapping elements for memory device applications

The work performed highlights the switching mechanism of MoSe2/PVA polymer nanocomposites (PNCs) at different concentrations of MoSe2 nanoparticles in the PVA matrix (1%, 3%, and 4%). The ex-situ approach had been used to synthesize MoSe2/PVA PNCs. XRD spectrum revealed the rise of crystallinity with the presence of MoSe2 nanoparticles in PVA. The bandgap calculated from UV-vis spectroscopy was 2.73 eV (1 wt%), 2.27 eV (3 wt%) and 2.19 eV (4 wt%). The quenching of photoluminescence (PL) spectra revealed an increase in trap states with the addition of MoSe2 while creating oxygen vacancies. FT-IR spectra showed the complete coverage of MoSe2 nanoparticles by PVA. FESEM showed the good dispersion of nanoparticles in the PVA matrix. The third-order non-linear susceptibility (chi((3))) was measured by the Z-scan technique and exhibited the presence of saturable and two-photon absorption phenomenon. An increase in chi((3)) verified the rise of electron population density in trap states. The increase in non-linearity indicated the fabrication of a good non-volatile Ag/ MoSe2-PVA/FTO memory device. I-V and WRER cycles were used to examine the electrical switching in a two-terminal memory device. The I-on/I-off ratio observed in endurance characteristics at 3 wt% concentration is similar to 9.28 x 10(2). The findings revealed the prospect of improving memory device performance using MoSe2/PVA PNCs by investigating the dynamics of linear, non-linear, and electrical responses in the material that are trap controlled. (c) 2022 Published by Elsevier B.V.

Automated summary

This study highlights the switching mechanism of MoSe2/PVA polymer nanocomposites at different concentrations of MoSe2 nanoparticles. The presence of MoSe2 nanoparticles improves the crystallinity and electron density of the PVA matrix, resulting in enhanced non-linear and electrical responses. These findings suggest the potential of MoSe2/PVA nanocomposites for fabricating high-performance memory devices.