4.5 Article Proceedings Paper

Effect of reaction temperature on formation of α-Si3N4 nanowires by a simple CVD method

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS B
Volume 36, Issue 09N11, Pages -

Publisher

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217979222400379

Keywords

alpha-Si3N4 nanowires; chemical vapor deposition; growth mechanism

Funding

  1. Scientific Research Foundation for the PhD (Jiangsu University of Science and Technology) [1062931908]
  2. Program for High-Level Entrepreneurial and Innovative Talents Introduction of Jiangsu Province [1064902009, 1064902005]
  3. Key Research Project of Zhenjiang [GJ2020014]

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Alpha-Si3N4 nanowires were successfully synthesized by a simple chemical vapor deposition method using Si and SiO2 as raw materials without the addition of metal catalyst. The reaction temperature was found to play a crucial role in determining the phase composition and morphologies of the nanowires.
alpha-Si3N4 nanowires were formed by a simple chemical vapor deposition (CVD) method using Si and SiO2 as raw materials without the addition of metal catalyst. The effect of reaction temperature on the phase composition and morphologies of the nanowires were analyzed by XRD and SEM. The experimental results indicate that a suitable reaction temperature is essential for the final products. At 1400 degrees C, small amount of target products were obtained, and some irregular particles were attached on the surfaces of nanowires. When the temperature increased to 1450 degrees C, the nanowires were mainly composed of alpha-Si3N4 phase, they had smooth surfaces with diameters fluctuating from 50 to 200 nm and lengths from hundreds to thousands of microns. At further high reaction temperature (1500 degrees C), beta-Si3N4 phase was observed and the nanowires had larger diameters, this was negative for obtaining purity alpha-Si3N4 nanowires. The growth process of alpha-Si3N4 nanowires was dominantly governed by the vapor-solid mechanism.

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