Journal
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
Volume 47, Issue 30, Pages 14044-14052Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijhydene.2022.02.147
Keywords
Potassium doping; Nitrogen defect; Graphitic carbon nitride; Hydrogen evolution
Categories
Funding
- National Natural Science Foun-dation of China [21806085, 22108129]
- Natural Science Foun-dation of Fujian Province [2021J05253, 2019J05121]
- Scientific Research Fund project of Ningde Normal University [2021Y05, 2021Q102, 2021ZDK09, 2019T03]
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Controlling the structure of semiconductors is crucial for tailoring their physicochemical and photoelectronic properties. Graphitic carbon nitride has shown potential in photocatalysis, but its photocatalytic activity is limited by the rapid recombination of charge carriers. In this study, we demonstrate that introducing potassium doping and nitrogen defects into graphitic carbon nitride can enhance visible light absorption, improve charge separation, and significantly enhance the photocatalytic behavior for water splitting.
Controlling the structure of semiconductors to tailor are physicochemical and photoelectronic structure features. Graphitic carbon nitride has triggered a new impetus in the field of photocatalysis. However, the rapid recombination of charge carriers limited its photocatalytic activity. Herein, we demonstrate that potassium doped and nitrogen defects into graphitic carbon nitride (KCNx) framework are favorable for visible light harvesting, charge separation and have highly efficient photocatalytic behavior for water splitting. It exhibits a high hydrogen evolution activity of 59.9 mmol center dot & nbsp;g(-1)center dot & nbsp;h(-1) (66.6 times much higher than that of pristine g-C3N4), and remarkable apparent quantum efficiency of 57.17% at 420 nm. The superior photocatalytic performance of the KCNx sample was attributed to the less recombination rate of photogenerated electron and hole, and enhanced conductivity,
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