Light-induced modification of the Schottky barrier height in graphene/Si based near-infrared photodiodes

The impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based nearinfrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.

Automated summary

The impact of light on the Schottky barrier height in p-type graphene/n-type Si based near-infrared photodiodes is investigated. The zero-bias SBH in such photodiodes can be effectively tuned by illumination, and the nonlinear dependence of SBH on incident light is explained using the Shockley-Read-Hall model. Light-induced tunability of SBH at the graphene/semiconductor heterojunction is crucial for the development of optically driven devices with graphene as a key element.