4.6 Article

Analysis of the Dual Side-Coupled RF Cavities for the HPM Devices-An Equivalent Circuit Approach

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 4, Pages 2051-2057

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3152473

Keywords

Equivalent circuit; high power microwave (HPM); klystron; microwave tube; reltron

Funding

  1. Directorate of Extramural Research & Intellectual Property Rights
  2. Defense Research and Development Organization (DRDO), Government of India, New Delhi

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In this study, an equivalent circuit analysis was conducted for the dual side-coupled cavities (DSCCs), which can be used as RF interaction structures in high power microwave devices and linear accelerators. The analysis determined the equivalent shunt capacitance per unit length and series inductance per unit length for TM01 mode operation. The phase velocity and characteristic impedance of the DSCC were calculated using these equivalent circuit parameters, and the dispersion behavior of the DSCC was also explored. The analysis was validated through electromagnetic simulations.
An equivalent circuit analysis was carried out for the dual side-coupled cavities (DSCCs) suitable as RF interaction structure in the high power microwave (HPM) devices and linear accelerators. Considering lossless structure, its equivalent shunt capacitance per unit length and series inductance per unit length are determined for the TM01 mode operation. These equivalent circuit parameters were used to calculate the phase velocity and characteristic impedance of the DSCC. This was utilized further to appreciate the dispersion behavior of the DSCC. The developed analysis was also validated through electromagnetic simulations.

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