Performance Analysis of Forming Free Switching Dynamics of e-Beam Evaporated SnOx Based Resistive Switching Device

In this article, we have investigated the forming free bipolar resistive switching (RS) phenomena of e-beam evaporated amorphous tin-oxide-based RS device with copper as a bottom electrode. To describe the impact of copper electrode over electrical response of tin-oxide-based RS device, we have used tungsten probe tip contact as a top electrode and copper as a bottom electrode. The crystal structure, energy bandgap, surface morphology, and device cross-sectional nanostructure view of deposited thin RS layer (tin-oxide) have been characterized by using X-ray diffraction (XRD), UV-visible spectroscopy, and field-emission scanning electron microscopy (FESEM), respectively. The electrical behavior of fabricated switching device has been recorded by Keithley-4200 parametric analyzer with customized probe station. Reported switching device has capability to perform reversible RS phenomena for 500 cycles with low set/reset (-0.52/0.39 V) voltage and good resistive window (similar to 15) without any considerable degradation. We have also discussed the primary reason for RS dynamics in the proposed device along with its conduction mechanism.

Automated summary

This article investigates the influence of copper electrode on the electrical response of tin-oxide-based bipolar resistive switching (RS) device. The crystal structure, energy bandgap, surface morphology, and nanostructure of the device are characterized, and the electrical behavior is recorded. The results show that the device exhibits reversible RS phenomena and good resistive window.