Characterization and Modeling of Reduced-Graphene Oxide Ambipolar Thin-Film Transistors

The rise of graphene as an innovative electronic material promoted the study and development of new 2-D materials. Among them, reduced graphene oxide (rGO) appears like an easy and cost-effective solution for the fabrication of thin-film transistors (TFTs). To understand the limits and possible application fields of rGO-based TFTs, a proper estimation of the device parameters is of extreme importance. In this work, liquid-gated ambipolar rGO-TFTs are characterized and a description of their working principle is given. Particular attention is paid toward the importance of the transistors' off-state conductivity that was modeled as a resistance connected in parallel with the TFT. Thanks to this model, the main transistor parameters were extrapolated from rGO-TFTs with different levels of electrochemical reduction. The extracted parameters allowed understanding that rGO-TFTs have similar holes and electrons mobilities, and the more pronounced p-type behavior of the devices is due to a positive shift in the p-type and n-type threshold voltages.

Automated summary

The rise of graphene as an innovative electronic material has led to the study and development of new 2-D materials. Reduced graphene oxide (rGO) has emerged as a simple and cost-effective solution for thin-film transistors (TFTs). This study characterizes liquid-gated ambipolar rGO-TFTs and provides a description of their working principle. By modeling the transistors' off-state conductivity, important parameters were extracted from rGO-TFTs with different levels of electrochemical reduction. The extracted parameters reveal that rGO-TFTs have similar hole and electron mobilities, with the more pronounced p-type behavior attributed to a positive shift in the p-type and n-type threshold voltages.